Екатерина Вавилова – All sciences. №9, 2023. International Scientific Journal (страница 2)
2. P. Kenneth Seidelmann et al. Report of the IAU/IAG Working Group on cartographic coordinates and rotational elements. 2006 // Celestial Mechanics and Dynamical Astronomy: journal – Springer Nature, 2007. – Vol. 98, No. 3. – P. 155—180.
3. National Aeronautics and Space Administration. Probe Nephelometer. // характеристики космического аппарата. – NASA/JPL. 1983. – Iss. 6.
4. Анна Сдобина. Ты не пройдёшь! Кто ловит космических странников на пути к Земле // Наука и жизнь, 2022,;4. – С. 10—16.
5. Tristan Guillot, Daniel Gautier. Giant Planets. – 2009-12-10.
6. Elkins-Tanton, Linda T. Jupiter and Saturn. – New York: Chelsea House, 2006. – ISNB 0-8160-5196-8.
7. Guillot, T.; Stevenson, D. J.; Hubbard, W. B.; Saumon, D. Chapter 3: The Interior of Jupiter // Jupiter: The Planet, Satellites and Magnetosphere (англ.) / Bagenal, F.; Dowling, T. E.; McKinnon, W. B. – Кембриджский университет Press, 2004. – ISBN 0521818087.
8. Bodenheimer, P. Calculations of the early evolution of Jupiter (англ.) // Icarus. – Elsevier, 1974. – Vol. 23. – P. 319. – doi:10.1016/0019—1035 (74) 90050—5
9. Hubbard, W. B.; Burrows, A.; Lunine, J. I. Theory of Giant Planets. – С. 112—115.
10. Георгий Бурба “Оазисы экзопланет”. // Журнал “Вокруг света” №9 (2792), Сентябрь 2006
11. Guillot, Tristan. Interiors of Giant Planets Inside and Outside the Solar System (англ.) // Science: journal. – 1999. – Vol. 286, no. 5437. – P. 72—77. – doi:10.1126/science.286.5437.72. – PMID 10506563.
12. Burrows, A.; Hubbard, W. B.; Saumon, D.; Lunine, J. I. An expanded set of brown dwarf and very low mass star models (англ.) // The Astrophysical Journal: journal. – IOP Publishing, 1993. – Vol. 406, no. 1. – P. 158—171. – doi:10.1086/172427.
13. Rory Barnes & Thomas Quinn. THE (IN) STABILITY OF PLANETARY SYSTEMS (англ.). – Seattle, WA: Dept. of Astronomy, University of Washington, JANUARY 12, 2004. – P. 30. – doi:10.1086/421321. – arXiv: astro-ph/0401171.
14. Roy, A. E. & Ovenden, M. W. On the occurrence of commensurable mean motions in the solar system (англ.). – Monthly Notices of the Royal Astronomical Society. – 232 p. – (SAO/NASA Astrophysics Data System (ADS)).
15. Мюррей К., Дермотт С. Динамика Солнечной системы. – Физматлит, 2010. – 588 с. – 500 экз. – ISBN 987-5-9221-1121-8.
16. Карл Саган “Космос: Эволюция Вселенной, жизни и цивилизации”, – СПб: Амфора, 2008, С. 58—61. ISBN 978-5-367-00829-6
17. Atreya, S. K.; Mahaffy, P. R.; Niemann, H. B. et al. Composition and origin of the atmosphere of Jupiter – an update, and implications for the extrasolar giant planets (англ.) // Planetary and Space Sciences: journal. – 2003. – Vol. 51. – P. 105—112. – doi:10.1016/S0032—0633 (02) 00144—7.
18. Sagan, C. et al. Polycyclic aromatic hydrocarbons in the atmospheres of Titan and Jupiter (англ.) // The Astrophysical Journal: рец. науч. журнал. – IOP Publishing, 1993. – Vol. 414, no. 1. – P. 399—405. – ISSN 0004—637X. – doi:10.1086/173086. – Bibcode: 1993ApJ…414..399S.
19. Ingersoll, A.P.; Dowling, T.E.; Gierasch, P.J.; et al. (2004). “Dynamics of Jupiter’s Atmosphere” (PDF). In Bagenal, F.; Dowling, T.E.; McKinnon, W.B. (ed.). Jupiter: The Planet, Satellites and Magnetosphere. Cambridge: Cambridge University Press. ISBN 0-521-81808-7..
20. Miller, Steve; Aylword, Alan; and Milliword, George. Giant Planet Ionospheres and Thermospheres: the Importance of Ion-Neutral Coupling (англ.) // Space Sci.Rev.: journal. – 2005. – Vol. 116. – P. 319—343. – doi:10.1007/s11214-005-1960-4..
21. Е. П. Левитан. Астрономия: Учебник для 11 кл. общеобразовательных учреждений. – 9-е изд. – М.: Просвещение, 2004. – ISBN 5-09-013370-0..
STUDY OF THE CONTROL PROPERTIES OF POLYCRYSTALLINE STRUCTURES BASED ON SILICON AND CADMIUM TELLURIDE
UDC 544.22
Salim Madrahimovich Otajonov
Doctor of Physical and Mathematical Sciences, Professor of the Department of “Professional Education” of the Faculty of Physics and Technology of Fergana State University
Alimov Nodir Esonalievich
Doctor of Philosophy in Physical and Mathematical Sciences, Lecturer at the Department of Physics, Faculty of Physics and Technology, Ferghana State University
Botirov Qodir Abdullayevich
Lecturer of the Department of “Professional Education” of the Faculty of Physics and Technology of Ferghana State University
Ferghana State University, Ferghana, Uzbekistan
Annotation. In this paper, the photoelectric properties of CdTe – SiO2 – Si heterostructures are investigated. For the first time, the possibility of controlling the spectrum of short – circuit current and photo-EMF using an integrated charge in a dielectric (SiO2) has been demonstrated. It was found that with an increase in the corona discharge potential, the spectra will mix into the short – wavelength regions of the spectrum from 0.93 to 1.5 eV, while the activation energy of the deep level of 0.73 eV changes significantly and this change occurs due to the Poole-Frenkel effect. It is found that the electric field strength in the vicinity of the defect is ε = 105 V/cm.
Keywords: photoconductivity, PHOTOEMF, spectral distribution of photosensitivity, short-circuit current, asymmetry of barriers, surface photo-EMF, deep levels, impurity photoconductivity, corona discharge.
Аннотация. В данной работе исследованы фотоэлектрические свойства гетероструктур на основе
Ключевые слова: фотопроводимость, фото-ЭДС, спектральное распределение фоточувствительности, ток короткого замыкания, асимметрия барьеров, поверхностная фото-ЭДС, глубокие уровни, примесная фотопроводимость, коронный разряд.
Introduction
The development of micro – nano electronics and new technological possibilities for the manufacture of complex semiconductor structures stimulate further study of new optical and photovoltaic phenomena in active film elements.
Currently, oxides and nitrides of semiconductors and semiconductor films grown on their surfaces are widely used in the manufacture of multichannel photovoltaic converters and other active elements of microelectronics circuits, and in particular, optoelectronics. In this case, it is possible to obtain high-quality and dielectric layers of semiconductors with deep levels. At the same time, it is easier and cheaper to use polycrystalline films sprayed on amorphous substrates rather than epitaxial ones.
CdTe semiconductor films are an important material for the creation of photodetector devices based on heterostructures operating in the near (up to 3 microns) and far (8—14 microns) The IR range. It is of interest to obtain heterostructures based on photosensitive layers with different types of conductivity. A promising p-type material doped with silver and copper, which give an acceptor level in the forbidden zone with a long lifetime of non-main charge carriers [1—14].
The aim of the work is to study new photovoltaic properties of active CdTe thin films and heterostructures in a system with SiO2-Si under conditions of specific external influences.
The results of experimental studies of the photovoltaic properties of textures from sprayed layers of CdTe – SiO2 – Si, etc., allow the development of new devices based on polycrystalline films with controlled properties.
Below we investigate the photosensitivity of the CdTe – SiO2 – Si structure, which can be used, for example, as a metal – silicon nitride oxide semiconductor (MNP) – a transistor with a polarized dielectric [1,2], which allows electrical rewriting of information.
Experimental results
Polycrystalline (grain sizes are 0.05—0.1 microns) CdTe films were obtained on the surface of SiO2 – Si. CdTe and Ag and Cu impurities evaporated in a vacuum of 10—5 mmHg from separate evaporators onto the heated oxidized surface of Si. The relative arrangement of the layers of the CdTe – SiO2 – Si structure and the ohmic contacts to them is schematically shown in Fig.1. In such a structure, photosensitivity is controlled by external influences, such as an electric field or corona discharge, which change the built-in field in the dielectric. In this case, we have a “reverse” field – effect transistor of the CdTe – SiO2 – Si type, when the control charge is located under the semiconductor layer, and its surface remains open.
Fig.1 The relative position of the layers of the CdTe – SiO2 – Si structure. 1,2 – contacts; 3 – filtering contacts.
Currently, electrification using a corona discharge is the main method of sensitizing photovoltaic layers in industrial electrography [3].
An experimental setup was used for corona electrification of the studied structures, the block diagram of which is presented in [4]. Electrification occurs due to deposition of positive or negative ions in a corona discharge on the surface of the layer. Corona discharge occurs if the voltage between the metallized surface of the Al layer and the electrode exceeds 6 kV, when the field embedded in the structure reached 100 V. The spectra of the short – circuit current charged in this way in the CdTe – SiO2 – Si structure were studied depending on the magnitude of the external corona discharge and showed that in the static mode a shift of the spectra to the short-wave region is observed (Fig.2). It turned out that in such a structure, the photosensitivity of the layer can be controlled by the action of an external corona discharge potential (using the “field effect” method), which, as it turns out below, induce embedded electric charges in the dielectric.